PG-EAM - Graduate Program in Aeronautical and Mechanical Engineering
PT EN
Article 2023

AlGaN films grown by reactive magnetron sputtering on glass substrates with different Al content

Authors

Horta, Isabela Machado
Damasceno, Barbara Souza
de Oliveira, Regiane Santana
Pereira, André Luis de Jesus
Massi, Marcos

Surfaces and Interfaces , vol. 40 , Article 103023

ISSN: 24680230

5
Citations
7
Authors

Abstract

© 2023AlGaN thin films with different Al content were grown via reactive magnetron sputtering onto glass substrates using independent Al and Ga targets. The quality of the films was analyzed using X-ray diffraction, Raman spectroscopy, energy dispersive spectroscopy, and UV-Vis spectrophotometry. The results show that the Al content can be effectively controlled by tuning the power ratio applied to the independent targets in different absolute situations. Moreover, all produced samples presented only wurtzite structure without indication of other phases on both X-ray diffraction and Raman spectroscopy analyses. Overall, the properties of the films had a strong correlation with the composition, such as the expected blue shift of the optical bandgap and the Raman phonon modes, and the lattice cell expansion with increasing Al content. In addition, a higher c-orientation texture together with a sharper diffraction peak were observed for samples with more Al.

Keywords

AlGaN GaN Glass Semiconductor sputtering Thin film

Surfaces, Coatings and Films (MATE)
: Scopus
Last Update: 2026-06-25
: 2-s2.0-85161356858
PII: S2468023023003930