Nanocrystalline Ga1-xMnxN films grown by reactive sputtering

Resumo

The growth of nanocrystalline Ga1-xMnxN (0.00≤x≤0.18) films grown by reactive RF-magnetron sputtering is focused here for the first time. The films were grown in a N2 atmosphere by co-sputtering technique using a Ga target covered with small pieces of Mn onto c-GaAs (1 0 0), c-Si (1 0 0) and amorphous SiO2 substrates maintained at 500 K. Scanning electron microscopy and X-ray diffraction (XRD) experiments did not show any evidence for Mn segregation within the studied composition range. EDX measurements show that the Mn concentration is increased monotonically with the fraction of the target area covered by Mn. The XRD characterization show that the films are nanocrystalline, the crystallites having mean grain sizes in the 15-19 nm range and wurtzite structure with preferential growth orientation along the c-axis direction. The lattice parameters of α-GaN (a and c) increase practically linearly with the increase of Mn incorporation. The changes in the structural properties of our films due to the Mn incorporation are similar to those that occur in ferromagnetic GaMnN single-crystal films. © 2006 Elsevier B.V. All rights reserved.

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