Photoelectrochemically induced copper deposition on P-silicon electrodes from CuCN solutions

Resumo

© 1990 SPIE. All rights reserved.We have studied the mechanisms of the copper metallization on P-silicon wafers immersed in CuCN solutions, using photoelectrochemical measurements and optical /electron microscopy. In this process the electroplating is enhanced by the minority carries in illuminated areas of the silicon cathode. The photo -selective deposition with high resolution have been obtained only on low doped Psilicon. The kinectics of the film growth is strongly dependent on the film thickness, and two mechanisms have been identified. Patterns of resolution of ∼4 microns can be realized only with thickness bellow ∼20 nm. Further investigation is needed for prevent the oxidation of the as-deposited film.